NCEAP028N85D mosfet equivalent, automotive n-channel super trench ii power mosfet.
* VDS =85V,ID =220A
RDS(ON)=2.4mΩ , typical @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175°C operating te.
that
require extremely high levels of reliabi.
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(O.
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